|Physics Deparment of CINVESTAV|
THE EPITAXY LABORATORY
The epitaxial growth is performed in a Riber 32P machine, with a basis pressure of 4 x 10-11 Torr, equipped with a 50 keV reflection high energy electron diffraction (RHEED) system. The growth chamber has cells charged with Cd, Te, Zn, Se, CdTe, CdS and In and ZnCl2 for n-type doping and a plasma source from Oxford Research for p-type doping using nitrogen. A total of 8 cells can be used for the growth. It is connected through ultra-high-vacuum to an analysis chamber equipped with Auger electron spectroscopy (AES), X-ray photoemission spectroscopy (XPS or ESCA), low energy electron diffraction (LEED), secondary electron microscopy (SEM), Ar ion sputtering and substrate heater. It is the only MBE system devoted to II-VI compounds in Latin America. A large variety of ex-situ experiments can be performed at the facilities of the Physics Department.
Several methods are employed for the epitaxial growth of thin films, heterostructures and quantum systems:
Molecular Beam Epitaxy (MBE)
Atomic Layer Epitaxy (ALE)
Submonolayer Pulsed Beam Epitaxy (SPBE)